The semiconducting silicon chip ushered in the revolution in electronics and computerization that life was barely recognizable from the start in the first years of the 21st century. Integrated silicon circuits (ICs) support virtually everything we take for granted in our networked, digital world: they control the systems we use and allow us to freely access and share information.
The advances since the first silicon transistor in 1947 have been enormous: the number of transistors on a single chip has risen from a few thousand in the earliest integrated circuits to more than two billion today. Moore's law, which states that the transistor density doubles every two years, is still 50 years after it was proposed.
However, silicon electronics are challenged: the latest circuits are only 7 nm wide - between a red blood cell (7,500 nm) and a single DNA strand (2.5 nm). The size of single silicon atoms (by 0.2 nm) would be a hard physical limit (with an atom-wide circuit), but their behavior becomes unstable and difficult to control before.
Without the ability to continue shrinking ICs, silicon can not continue to produce the profits it has so far. To meet this challenge, we may need to rethink how we make equipment, or even whether we need an alternative to silicon itself.
Speed, heat and light
To understand the challenge, we need to examine why silicon has become the material of choice for electronics. It has many advantages - it is abundant, relatively easy to process, has good physical properties, and has a stable native oxide (SiO2) that happens to be a good insulator - it also has several disadvantages.
A big advantage of combining more and more transistors in a single chip, for example, is that an IC can process information faster. However, this speed boost crucially depends on how easily electrons can move within the semiconductor material. This is known as electron mobility, and while electrons in silicon are quite mobile, they are much more so in other semiconductor materials such as gallium arsenide, indium arsenide, and indium antimonide.
However, the useful conductivity properties of semiconductors involve not only the movement of electrons, but also the movement of so-called electron holes - the gaps left in the lattice of electrons revolving around the core after the electrons are expelled.
Modern ICs use a technique called Complementary Metal Oxide Semiconductor (CMOS) that uses a transistor pair, one using electrons and the other using electron holes. However, the mobility of electron holes in silicon is very low and this is an obstacle to higher performance - so much so that manufacturers need to increase it for several years by including germanium in the silicon.
The second problem with silicon is that its performance deteriorates severely at high temperatures. Modern ICs with billions of transistors generate significant heat, which is why they require a lot of cooling - think of the fans and heatsinks attached to a typical desktop computer processor. Alternative semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) handle much better at higher temperatures, which means they can run faster and have begun to replace silicon in critical high-power applications such as amplifiers.
Finally, silicon is very bad at transmitting light. While lasers, LEDs, and other photonic devices are commonplace today, they use alternative semiconductor connections to silicon. As a result, two different industries have developed, silicon for electronics and compound semiconductors for photonics. This situation has existed for years, but now there is a great deal of effort to combine electronics and photonics on a single chip. That's a big problem for the manufacturers.
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New materials for the future
Of the many materials being studied as partners in improving the electronic performance of silicon, perhaps three are promising in the short term.
The first concerns the poor electron mobility of silicon. A small amount of germanium is already added to improve this, but it would be even better to use large amounts or even a switch to all-germanium transistors. Germanium was the first material used for semiconductor devices. So that's really a step back in the future. However, a reorientation of the established industry to germanium would be quite a problem for the manufacturers.
The second concerns metal oxides. Silicon dioxide has been used in transistors for many years, but with miniaturization, the silicon dioxide layer has shrunk to gradually lose its insulating properties, resulting in unreliable transistors. Despite the decision to use hafnium dioxide (HfO2) from rare earths as a replacement insulator, alternatives with even better insulating properties are being sought.
Perhaps most interesting is the use of so-called III-V compound semiconductors, especially those containing indium, such as indium arsenide and indium antimonide. These semiconductors have up to 50 times higher electron mobility than silicon. In combination with germanium-rich transistors, this approach could lead to a significant increase in speed.
Yet not everything is as easy as it seems. Silicon, germanium, oxides and the III-V materials are crystalline structures whose properties depend on the integrity of the crystal. We can not just throw them together with silicon and get the best out of both. The solution to this problem, the crystal lattice mismatch, is the biggest technological challenge.
Various flavors of silicon
Despite its limitations, silicon electronics have proven to be adaptable and can be converted to reliable mass market devices with minimal cost. Despite the headlines about the "end of silicon" or the spectacular (and sometimes rather unrealistic) promise of alternative materials, silicon is still king and will not be sold in our lives, based on a huge and extremely well-developed global industry.
Instead, advances in electronics are made by improving silicon through the integration of other materials. Companies like IBM, Intel and university labs worldwide have put a lot of time and effort into this challenge. The results are promising: a hybrid approach, mixing III-V materials, silicon and germanium, could be launched within a few years. Compound semiconductors have already found important applications in lasers, LED lighting / displays, and solar modules where silicon simply can not compete. Advanced connectivity is needed as electronic devices become smaller and smaller in power, as well as for high performance electronics where their properties greatly enhance the capabilities of silicon.
The future of electronics is promising and will still be largely based on silicon - but now there are silicon in many different flavors.